A team at Warwick University have developed an innovative new approach for transferring graphene from growth to application substrates. The new method results in less contamination and is faster than conventional methods. Prof. Patrick Unwin, who leads the team, commented: “this exciting progress provides a new approach for moving CVD graphene onto application substrates, which is currently […]
If you’re off to Graphene 2016 next week, come find us at booth 3 in the exhibition. Working nanoCVD-8G and nanoETCH tools on display!
Together with our Italian distributor 2M Strumenti, we will be exhibiting our unique benchtop graphene synthesis and etching products at Graphene 2016, in Genoa, 19-22 April. Come along and visit our stand for demos of operational instruments.
Zhang, G., et al. ACS Applied Materials and Interfaces 2007 DOI: 10.1021/acsami.6b00681 A new procedure for transferring graphene from growth substrates (e.g., copper foil) is described. The method involves placing post-growth substrates (produced here using a Moorfield nanoCVD-8G system) at an interface between immiscible hexane and an aqueous etching solution. The etching solution removes the […]
Passi, V. et al. Journal of Nano Research 2016 DOI: 10.4028/www.scientific.net/JNanoR.39.57 Fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a nanoCVD-8G system from Moorfield. Graphene is produced on copper foils and subsequently transferred onto silicon-dioxide/silicon substrates. Comparison of electrical and optical characteristics of the […]
Riazimehr, S., et al. Solid-State Electronics 2015 DOI: 10.1016/j.sse.2015.08.023 Two-dimensional (2D) Schottky photodiode heterojunctions are formed from CVD graphene on n- and p-type silicon (Si) substrates. The CVD graphene was made using a nanoCVD-8G. Rectification behavior is improved using diodes fabricated on n-Si substrates in comparison with devices on p-Si substrates in dark condition. Also, […]
Designed for low-temperature graphene synthesis, using plasma-enhanced methods, and for wafer-scale substrates. Watch this space…
Multiple high-impact publications report production and application of exceptional quality graphene with nanoCVD systems. Look over the Publications section for links.
High quality monolayer graphene synthesized by resistive heating cold wall chemical vapor deposition
Bointon, T. H., et al. Advanced Materials 2015 DOI: 10.1002/adma.201501600 Demonstrates the advantages of the cold-walled approach to CVD-synthesis of graphene, and reports the exceptional high quality of graphene produced using the nanoCVD-8G. Material is shown to have super-high charge carrier mobilities, exhibits the half integer quantum Hall effect, and is found to be comparable […]
nanoCVD-8G used to create high-quality graphene for work towards truly flexible ‘electronic skin’, that could be used in robots! Check out the University of Exeter press release for more details.
Moorfield will once again be taking their latest products on tour, including working nanoCVD tools. Destinations are central and southern Europe, and dates are late summer. Contact us for details.
Neves, A. I. S., et al. Scientific Reports 2015 DOI: 10.1038/srep09866 Graphene, produced using a nanoCVD-8G, is transferred to fibers for the first production of flexible, fully-embedded textile electrodes. The high quality of the graphene means the electrodes have ultra-low sheet resistance and high mechanical stability. Link: http://www.nature.com/articles/srep09866 Moorfield products: nanoCVD-8G