Passi, V. et al. Journal of Nano Research 2016 DOI: 10.4028/www.scientific.net/JNanoR.39.57 Fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a nanoCVD-8G system from Moorfield. Graphene is produced on copper foils and subsequently transferred onto silicon-dioxide/silicon substrates. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon.
Moorfield products: nanoCVD-8G