Riazimehr, S., et al. Solid-State Electronics 2015 DOI: 10.1016/j.sse.2015.08.023
Two-dimensional (2D) Schottky photodiode heterojunctions are formed from CVD graphene on n- and p-type silicon (Si) substrates. The CVD graphene was made using a nanoCVD-8G. Rectification behavior is improved using diodes fabricated on n-Si substrates in comparison with devices on p-Si substrates in dark condition. Also, graphene – n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2) – p-type silicon photodiode.
Moorfield products: nanoCVD-8G