Chemical vapor deposited graphene for opto-electronic applications

Passi, V. et al. Journal of Nano Research 2016 DOI: 10.4028/www.scientific.net/JNanoR.39.57 Fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a nanoCVD-8G system from Moorfield. Graphene is produced on copper foils and subsequently transferred onto silicon-dioxide/silicon substrates. Comparison of electrical and optical characteristics of the […]

Spectral sensitivity of graphene/silicon heterojunction photodetectors

Riazimehr, S., et al. Solid-State Electronics 2015 DOI: 10.1016/j.sse.2015.08.023 Two-dimensional (2D) Schottky photodiode heterojunctions are formed from CVD graphene on n- and p-type silicon (Si) substrates. The CVD graphene was made using a nanoCVD-8G. Rectification behavior is improved using diodes fabricated on n-Si substrates in comparison with devices on p-Si substrates in dark condition. Also, […]

Transparent conductive graphene textile fibers

Neves, A. I. S., et al. Scientific Reports 2015 DOI: 10.1038/srep09866 Graphene, produced using a nanoCVD-8G, is transferred to fibers for the first production of flexible, fully-embedded textile electrodes. The high quality of the graphene means the electrodes have ultra-low sheet resistance and high mechanical stability. Link: http://www.nature.com/articles/srep09866 Moorfield products: nanoCVD-8G

Residual metallic contamination of transferred chemical vapor deposited graphene

Lupina, G., et al. ACS Nano 2015 DOI: 10.1021/acsnano.5b01261 Wet transfer processes that are often used to place CVD graphene onto application substrates are shown to result in the trace contamination of the material. These purities can adversely affect graphene’s otherwise exceptional properties, with implications for electronic and optoelectronic applications. Link: http://pubs.acs.org/doi/abs/10.1021/acsnano.5b01261 Moorfield products: nanoCVD-8G

Chemical vapor deposited graphene: From synthesis to applications

Kataria, S., et al. Physica Status Solidi A 2015 DOI: 10.1002/pssa.201400049 Review paper that discusses large-scale graphene production using chemical vapour deposition (CVD) techniques. The features and benefits of Moorfield nanoCVD technology for rapid production of CVD graphene are discussed. Link: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201400049/abstract Moorfield products: nanoCVD-8G

Selection, characterisation and mapping of complex electrochemical processes at individual single-walled carbon nanotubes: the case of serotonin oxidation

Güell, A. G., et al. Faraday Discussions 2014 DOI: 10.1039/C4FD00054D SWNTs are employed for the electrochemical detection of the neurotransmitter serotonin. In this report, the detection mechanism is investigated at the single-SWNT level using a variery of techniques. The results indicate that pristine SWNTs exhibit a high level of activity as sensors for biologically-relevant species. […]

Nanoscale electrocatalysis: Visualizing oxygen reduction at pristine, kinked, and oxidized sites on individual carbon nanotubes

Byers, J. C., et al. Journal of the American Chemical Society 2014 DOI: 10.1021/ja505708y Electrochemical techniques, in combination with SWNTs produced using nanoCVD-8N technology, are used to demonstrate that carbon nanotubes exhibit significant activity even when not doped, modified or defected. Link: http://pubs.acs.org/doi/abs/10.1021/ja505708y Moorfield products: nanoCVD-8N

Mapping nanoscale electrochemistry of individual single-walled carbon nanotubes

Güell, A. G., et al. Nano Letters 2014 DOI: 10.1021/nl403752e Single-walled carbon nanotubes (SWNTs), made using nanoCVD-8N technology, are probed using electrochemical techniques. The high-resolution measurements enable the properties of individual SWNTs to be examined. The findings are important for future design of devices employing SWNT electrodes. Link: http://pubs.acs.org/doi/abs/10.1021/nl403752e Moorfield products: nanoCVD-8N

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Georgiou, T., et al. Nature Nanotechnology 2012 DOI: 10.1038/nnano.2012.224 Vertical field-effect transistor devices are formed by stacking the 2-dimensional materials graphene and tungsten disulphide. The unique transport mechanisms available in such devices allow for unprecedented current modulation and high ON currents. Moorfield ‘soft etching’ technology is used to prepare substrates for accepting materials, and for […]

Chaotic dirac billiard in graphene quantum dots

Ponomarenko, L. A., et al. Science 2008 DOI: 10.1126/science.1154663 Quantum dot devices of various sizes are carved from graphene. Large-scale quantum dots (>100 nm) are found to behave as conventional single-electron transistors. On the other hand, for smaller quantum dots quantum confinement is shown to have an effect. Moorfield ‘soft etching’ technology is used to […]

Detection of individual gas molecules adsorbed on graphene

Schedin, F., et al. Nature Materials 2007 DOI: 10.1038/nmat1967 Micrometre-size sensors made of graphene are shown capable of detecting when a single gas molecule attaches to the sensor’s surface. Moorfield ‘soft etching’ technology is used to prepare substrates for mechanical exfoliation of graphene, and for etching the graphene into the required (Hall bar) device structures. […]