Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Georgiou, T., et al. Nature Nanotechnology 2012 DOI: 10.1038/nnano.2012.224
Vertical field-effect transistor devices are formed by stacking the 2-dimensional materials graphene and tungsten disulphide. The unique transport mechanisms available in such devices allow for unprecedented current modulation and high ON currents. Moorfield ‘soft etching’ technology is used to prepare substrates for accepting materials, and for removing unwanted material as part of device fabrication.

Link: http://www.nature.com/nnano/journal/v8/n2/full/nnano.2012.224.html?WT.ec_id=NNANO-201302

Moorfield products: Soft-Etching systems

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