nanoCVD-WG(P)

A compact, plasma-enhanced, wafer-scale CVD (Chemical Vapour Deposition) system for rapid synthesis of high-quality graphene.
Techniques

Techniques include: Applications include: Graphene & 2D materials, Electrodes for photovoltaics, Touchscreen displays, High-performance electronics Biological, chemical and mechanical sensors, Electrical energy storage

Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies.

Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.

Growth schemes
Compatible with numerous CVD methods:

  • Substrates: Cu, Ni, etc. (films or foils)
  • Feedstocks: CH4, C2H4, solids (PMMA), etc.
  • Process gases: H2, Ar, N2, etc.
Key features
  • Compact design
  •  
  • Wafer-scale synthesis: 3"/75 mm or 4"/100 mm
  •  
  • 150 W/13.56 MHz RF power supply
  •  
  • 1100 °C maximum platen temperature
  •  
  • Cold-walled technology
  •  
  • Fully-automatic control of critical conditions
  •  
  • User-friendly, touchscreen interface
  •  
  • Define/save multiple growth recipes
  •  
  • PC connection for data-logging
  •  
  • Equipped for easy servicing
  •  
  • Comprehensive safety features
  •  
  • Cleanroom compatible
  •  
  • Implements proven nanoCVD technology
  • Options
  • Plasma module: 150 W/13.56 MHz RF power supply
  •  
  • Up to 4 process gas MFCs
  •  
  • Load-lock compatible
  • Typical configurations

    Process chamber:
    Cold-walled, stainless steel with heat shielding.

    Pumping system:
    Turbomolecular pumping system; <5×10-7 mbar base pressure.

    Substrate stage:
    Up to 4″ diameter. Up to 1100 °C with 1 °C control resolution.

    System operation:
    Touchscreen HMI and PC software. Manual or automatic control.

    Process gases:
    MFC controlled. Ar, CH4 and H2 as standard.

    Pressure control:
    Automatic.

    Plasma generation:
    150 W/13.56 MHz RF power supply. Generation at substrate stage or remote electrodes.

    Safety features:
    Coolant and vacuum interlocks. Gas dilution modules.

    Service requirements

    All nanoCVD-WG(P) tools require coolant flow, process gases, dry compressed air, nitrogen for venting (optional) and exhaust dilution, and electrical power. Exact requirements will be provided with quotations or on request.

    Get a quote for nanoCVD-WG(P)

    Recent posts related to this system

    Recirculating chillers
    Using recirculating chillers
    Don’t land yourself in cold water. Protect your investment with a chiller…

    Knowledge base

    Graphene soft-etching with the nanoETCH
    Moorfield graphene soft-etching technology allows for the controlled removal of graphene and 2D materials, without cross-linking photoresists that can lead to residual contamination that affects device performance….
    nano vacuum Moorfield
    New Australia & New Zealand distributor
    Moorfield Nanotechnology Limited (Knutsford, UK) recently announced the appointment of a new distributor for their PVD, CVD and etch products for the Australia and New Zealand region….
    RAMS 2017 Conference

    Thank you

    We’ve received your message and will be in touch soon

    Thank you for signing up