Techniques include: Applications include: Graphene & 2D materials, Electrodes for photovoltaics, Touchscreen displays, High-performance electronics Biological, chemical and mechanical sensors, Electrical energy storage
Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies.
Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.
Growth schemes
Compatible with numerous CVD methods:
Process chamber:
Cold-walled, stainless steel with heat shielding.
Pumping system:
Turbomolecular pumping system; <5×10-7 mbar base pressure.
Substrate stage:
Up to 4″ diameter. Up to 1100 °C with 1 °C control resolution.
System operation:
Touchscreen HMI and PC software. Manual or automatic control.
Process gases:
MFC controlled. Ar, CH4 and H2 as standard.
Pressure control:
Automatic.
Plasma generation:
150 W/13.56 MHz RF power supply. Generation at substrate stage or remote electrodes.
Safety features:
Coolant and vacuum interlocks. Gas dilution modules.
All nanoCVD-WG(P) tools require coolant flow, process gases, dry compressed air, nitrogen for venting (optional) and exhaust dilution, and electrical power. Exact requirements will be provided with quotations or on request.
