Contact resistance study of various metal electrodes with CVD graphene

Gahoi, A. et al. Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.07.008
The contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. The graphene was made using a Moorfield nanoCVD-8G system. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of −40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene.


Moorfield products: nanoCVD-8G

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