Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n-ITO heterojunction

Broadband photodetectors that operate from the ultraviolet to the near-infrared are important for optoelectronic sensing and imaging applications. This paper reports a heterojunction photodetector based on topological p-TlBiSe2 combined with n-ITO, designed for wide-band spectral photodetection across the UV-NIR range.

According to the abstract-level information available, the researchers fabricated and characterised a p-TlBiSe2/n-ITO heterojunction photodetector and investigated its spectral photodetection behaviour and detectivity. The work focuses on the use of this topological heterojunction architecture for broadband photodetection performance. As the full text was not accessible here, further process details and quantitative device results are not included.

How Moorfield products helped:

nanoPVD

Thin-film and electrode deposition for photodetector structures

The nanopvd-t15a was instrumental in the study for its role in the precise deposition of TlBiSe2 thin films, which was essential for the successful fabrication of the p-TlBiSe2/n-ITO heterojunction. 

Publication details:

Gyanendra Kumar Maurya, Sandeep Kumar Verma, Roshani Singh, Satendra Kumar, Vipin Kumar, Rachana Kumar, and Pramod Kumar, Materials Science in Semiconductor Processing, 2025, 193, 109513. https://doi.org/10.1016/j.mssp.2025.109513