Plasma etching is an excellent way to clean substrate surfaces, promote adhesion and optimise sample quality layers
A compact, plasma-enhanced, wafer-scale CVD (Chemical Vapour Deposition) system for rapid synthesis of high-quality graphene.
Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies. Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.
Process chamber: Cold-walled, stainless steel with heat shielding. Pumping system: Turbomolecular pumping system; <5×10-7 mbar base pressure. Substrate stage: Up to 4″ diameter. Up to 1100 °C with 1 °C control resolution. System operation: Touchscreen HMI and PC software. Manual or automatic control. Process gases: MFC controlled. Ar, CH4 and H2 as standard. Pressure control: Automatic. Plasma generation: 150 W/13.56 MHz RF power supply. Generation at substrate stage or remote electrodes. Safety features: Coolant and vacuum interlocks. Gas dilution modules.
Compatible with numerous CVD methods:
- Substrates: Cu, Ni, etc. (films or foils)
- Feedstocks: CH4, C2H4, solids (PMMA), etc.
- Process gases: H2, Ar, N2, etc.