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Schottky diodes on ZnO thin films grown by plasma-enhanced atomic layer deposition

Jin, J., et al. IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2647284

Zinc oxide Schottky diodes are fabricated using PE-ALD with RF sputtering used to create the silver oxide contact electrodes. RF sputtering was carried out using a nanoPVD-S10A system from Moorfield. Diode performance was optimised by tuning the PE-ALD parameters, with an optimised device having an ideality factor of 1.33, an effective barrier height of 0.80 eV, and an ON/OFF ratio of 3.11 × 105.

Link: http://ieeexplore.ieee.org/document/7828076/?reload=true

Moorfield products: nanoPVD-S10A

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