Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Macháč, P., et al. Journal of Electrical Engineering 2017 DOI: 10.1515/jee-2017-0011

The work reports the synthesis of few-layer graphene films at the interface of an SiO2 chip and a cobalt thin film. The cobalt layer decomposes methane feedstock, absorbs the carbon released at the SiO2/cobalt interface where it assembles into an sp2 layer. This approach is convenient for obtaining graphene on application substrates without so-called transfer procedures.

Link: https://www.degruyter.com/view/j/jee.2017.68.issue-1/jee-2017-0011/jee-2017-0011.xml

Moorfield products: nanoCVD-8G

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