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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Jin, J., et al. Journal of Physics D: Applied Physics 2018 DOI: 10.1086/1361-6463/aaa4a2

The authors report the fabrication of high-speed Schottky diode rectifiers from zinc oxide, with PtOx Schottky contacts. For this, ZnO was deposited using PE-ALD, while metal and PtOx contacts were produced by RF sputtering using a Moorfield nanoPVD-S10A system, including in reactive sputtering mode (deposition of platinum through an oxygen-containing atmosphere). The devices produced had properties suitable for use in noise-sensitive and high-frequency electronics.

http://iopscience.iop.org/article/10.1088/1361-6463/aaa4a2

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