nanoCVD-WG(P)
A compact, plasma-enhanced, wafer-scale CVD (Chemical Vapour Deposition) system for rapid synthesis of high-quality graphene.
Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies.
Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.
Growth schemes
Compatible with numerous CVD methods:
- Substrates: Cu, Ni, etc. (films or foils)
- Feedstocks: CH4, C2H4, solids (PMMA), etc.
- Process gases: H2, Ar, N2, etc.
Options
- Plasma module: 150 W/13.56 MHz RF power supply
- Up to 4 process gas MFCs
- Load-lock compatible
Key features
- Compact design
- Wafer-scale synthesis: 3″/75 mm or 4″/100 mm
- 150 W/13.56 MHz RF power supply
- 1100 °C maximum platen temperature
- Cold-walled technology
- Fully-automatic control of critical conditions
- User-friendly, touchscreen interface
- Define/save multiple growth recipes
- PC connection for data-logging
- Equipped for easy servicing
- Comprehensive safety features
- Cleanroom compatible
- Implements proven nanoCVD technology
