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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Moorfield Nanotechnology

Jin, J., et al. Journal of Physics D: Applied Physics 2018 DOI: 10.1086/1361-6463/aaa4a2 The authors report the fabrication of high-speed Schottky diode rectifiers from zinc oxide, with PtOx Schottky contacts. For this, ZnO was deposited using PE-ALD, while metal and PtOx contacts were produced by RF sputtering using a Moorfield nanoPVD-S10A system, including in reactive sputtering mode […]

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Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Moorfield Nanotechnology

Macháč, P., et al. Journal of Electrical Engineering 2017 DOI: 10.1515/jee-2017-0011 The work reports the synthesis of few-layer graphene films at the interface of an SiO2 chip and a cobalt thin film. The cobalt layer decomposes methane feedstock, absorbs the carbon released at the SiO2/cobalt interface where it assembles into an sp2 layer. This approach […]

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Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Moorfield Nanotechnology

Sassi, U., et al. Nature Communications 2017 DOI: 10.1038/ncomms14311 This work reports the use of graphene as part of an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. The nanoETCH system is critical as part of the work, being […]

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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Moorfield Nanotechnology

Jin, J., et al. IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2647284 Zinc oxide Schottky diodes are fabricated using PE-ALD with RF sputtering used to create the silver oxide contact electrodes. RF sputtering was carried out using a nanoPVD-S10A system from Moorfield. Diode performance was optimised by tuning the PE-ALD parameters, with an optimised device […]

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Graphene growth by chemical vapor deposition process on copper foil

Moorfield Nanotechnology

Macháč, P., et al. ElectroScope 2016 The paper demonstrates the production of graphene using the cold-walled method as implemented in the nanoCVD-8G. Link: http://147.228.94.30/index.php?option=com_content&view=article&id=468:graphene-growth-by-chemical-vapor-deposition-process-on-copper-foil&catid=59:2016-12-12-09-18-59&Itemid=56 Moorfield products: nanoCVD-8G […]

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A simple process for the fabrication of large-area CVD graphene based devices via selective in situ functionalization and patterning

Moorfield Nanotechnology

Alexeev, A. A., et al. 2D Materials 2016 DOI: 10.1088/2053-1583/4/1/011010 This paper reports a simple method for the production of functional devices from CVD graphene (produced using a nanoCVD-8G system). Rather than forming devices on the application substrate after transfer, the authors demonstrate material patterning on the copper growth substrate, using lithography and plasma oxidation, […]

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Moorfield Nanotechnology

Wagner, S. et al. Microelectronic Engineering 2016 DOI: 10.1016/j.mee.2016.02.065 In this work, graphene, fabricated using a Moorfield nanoCVD-8G system, was transferred onto pre-fabricated microcavity substrates using different methods. The devices were then investigated and analyzed with respect to yield and quality of the free-standing membranes on a large-scale. An effective transfer method for layer-by-layer stacking […]

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Contact resistance study of various metal electrodes with CVD graphene

Moorfield Nanotechnology

Gahoi, A. et al. Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.07.008 The contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. The graphene was made using a Moorfield nanoCVD-8G system. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at […]

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Versatile Polymer-Free Graphene Transfer Method and Applications

Moorfield Nanotechnology

Zhang, G., et al. ACS Applied Materials and Interfaces 2007 DOI: 10.1021/acsami.6b00681 A new procedure for transferring graphene from growth substrates (e.g., copper foil) is described. The method involves placing post-growth substrates (produced here using a Moorfield nanoCVD-8G system) at an interface between immiscible hexane and an aqueous etching solution. The etching solution removes the […]

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