Contact resistance study of various metal electrodes with CVD graphene

27 July 2016

Gahoi, A. et al. Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.07.008
The contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. The graphene was made using a Moorfield nanoCVD-8G system. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of −40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene.

Link: http://www.sciencedirect.com/science/article/pii/S0038110116300880

Moorfield products: nanoCVD-8G

Versatile Polymer-Free Graphene Transfer Method and Applications

08 March 2016

Zhang, G., et al. ACS Applied Materials and Interfaces 2007 DOI: 10.1021/acsami.6b00681
A new procedure for transferring graphene from growth substrates (e.g., copper foil) is described. The method involves placing post-growth substrates (produced here using a Moorfield nanoCVD-8G system) at an interface between immiscible hexane and an aqueous etching solution. The etching solution removes the copper, leaving the graphene freely suspended. Application substrates are easily connected with the graphene by moving them through the liquid.

Link: http://pubs.acs.org/doi/abs/10.1021/acsami.6b00681

Moorfield products: nanoCVD-8G

Chemical Vapor Deposited Graphene for Opto-Electronic Applications

01 February 2016

Passi, V. et al. Journal of Nano Research 2016 DOI: 10.4028/www.scientific.net/JNanoR.39.57 Fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a nanoCVD-8G system from Moorfield. Graphene is produced on copper foils and subsequently transferred onto silicon-dioxide/silicon substrates. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon.

Link: http://www.scientific.net/JNanoR.39.57

Moorfield products: nanoCVD-8G

Spectral sensitivity of graphene/silicon heterojunction photodetectors

16 September 2015

Riazimehr, S., et al. Solid-State Electronics 2015 DOI: 10.1016/j.sse.2015.08.023
Two-dimensional (2D) Schottky photodiode heterojunctions are formed from CVD graphene on n- and p-type silicon (Si) substrates. The CVD graphene was made using a nanoCVD-8G. Rectification behavior is improved using diodes fabricated on n-Si substrates in comparison with devices on p-Si substrates in dark condition. Also, graphene – n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2) – p-type silicon photodiode.

Link: http://www.sciencedirect.com/science/article/pii/S0038110115002518

Moorfield products: nanoCVD-8G

High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition

05 June 2015

Bointon, T. H., et al. Advanced Materials 2015 DOI: 10.1002/adma.201501600
Demonstrates the advantages of the cold-walled approach to CVD-synthesis of graphene, and reports the exceptional high quality of graphene produced using the nanoCVD-8G. Material is shown to have super-high charge carrier mobilities, exhibits the half integer quantum Hall effect, and is found to be comparable to natural samples.

Link: http://onlinelibrary.wiley.com/doi/10.1002/adma.201501600/abstract

Moorfield products: nanoCVD-8G

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