A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

19 January 2018

Jin, J., et al. Journal of Physics D: Applied Physics 2018 DOI: 10.1086/1361-6463/aaa4a2

The authors report the fabrication of high-speed Schottky diode rectifiers from zinc oxide, with PtOx Schottky contacts. For this, ZnO was deposited using PE-ALD, while metal and PtOx contacts were produced by RF sputtering using a Moorfield nanoPVD-S10A system, including in reactive sputtering mode (deposition of platinum through an oxygen-containing atmosphere). The devices produced had properties suitable for use in noise-sensitive and high-frequency electronics.

Link: http://iopscience.iop.org/article/10.1088/1361-6463/aaa4a2

Moorfield products: nanoPVD-S10A

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

14 March 2017

Macháč, P., et al. Journal of Electrical Engineering 2017 DOI: 10.1515/jee-2017-0011

The work reports the synthesis of few-layer graphene films at the interface of an SiO2 chip and a cobalt thin film. The cobalt layer decomposes methane feedstock, absorbs the carbon released at the SiO2/cobalt interface where it assembles into an sp2 layer. This approach is convenient for obtaining graphene on application substrates without so-called transfer procedures.

Link: https://www.degruyter.com/view/j/jee.2017.68.issue-1/jee-2017-0011/jee-2017-0011.xml

Moorfield products: nanoCVD-8G

Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

10 February 2017

Sassi, U., et al. Nature Communications 2017 DOI: 10.1038/ncomms14311

This work reports the use of graphene as part of an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. The nanoETCH system is critical as part of the work, being used to both etch the graphene into required patterns and for modifying single sheets in order to provide for ultra-low contact resistances.

Link: http://www.nature.com/articles/ncomms14311

Moorfield products: nanoETCH

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

20 January 2017

Jin, J., et al. IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2647284

Zinc oxide Schottky diodes are fabricated using PE-ALD with RF sputtering used to create the silver oxide contact electrodes. RF sputtering was carried out using a nanoPVD-S10A system from Moorfield. Diode performance was optimised by tuning the PE-ALD parameters, with an optimised device having an ideality factor of 1.33, an effective barrier height of 0.80 eV, and an ON/OFF ratio of 3.11 × 105.

Link: http://ieeexplore.ieee.org/document/7828076/?reload=true

Moorfield products: nanoPVD-S10A

Graphene growth by chemical vapor deposition process on copper foil

12 December 2016

Macháč, P., et al. ElectroScope 2016
The paper demonstrates the production of graphene using the cold-walled method as implemented in the nanoCVD-8G.

Link: http://147.228.94.30/index.php?option=com_content&view=article&id=468:graphene-growth-by-chemical-vapor-deposition-process-on-copper-foil&catid=59:2016-12-12-09-18-59&Itemid=56

Moorfield products: nanoCVD-8G

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