Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

10 February 2017

nanoETCH

Sassi, U., et al. Nature Communications 2017 DOI: 10.1038/ncomms14311
This work reports the use of graphene as part of an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. The nanoETCH system is critical as part of the work, being used to both etch the graphene into required patterns and for modifying single sheets in order to provide for ultra-low contact resistances.

Link: http://www.nature.com/articles/ncomms14311

Moorfield products: nanoETCH

Graphene transfer methods for the fabrication of membrane-based NEMS devices

13 August 2016

Wagner, S. et al. Microelectronic Engineering 2016 DOI: 10.1016/j.mee.2016.02.065
In this work, graphene, fabricated using a Moorfield nanoCVD-8G system, was transferred onto pre-fabricated micro cavity substrates using different methods. The devices were then investigated and analyzed with respect to yield and quality of the free-standing membranes on a large-scale. An effective transfer method for layer-by-layer stacking of graphene was developed to improve the membrane stability and thereby increase the yield of completely covered and sealed cavities. The transfer method with the highest yield was used to fabricate graphene NEMS devices. Electrical measurements were carried out to successfully demonstrate pressure sensing as a possible application for these graphene membranes.

Link: http://www.sciencedirect.com/science/article/pii/S0167931716301083

Moorfield products: nanoCVD-8G

Contact resistance study of various metal electrodes with CVD graphene

27 July 2016

Gahoi, A. et al. Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.07.008
The contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. The graphene was made using a Moorfield nanoCVD-8G system. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of −40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene.

Link: http://www.sciencedirect.com/science/article/pii/S0038110116300880

Moorfield products: nanoCVD-8G

Versatile Polymer-Free Graphene Transfer Method and Applications

08 March 2016

Zhang, G., et al. ACS Applied Materials and Interfaces 2007 DOI: 10.1021/acsami.6b00681
A new procedure for transferring graphene from growth substrates (e.g., copper foil) is described. The method involves placing post-growth substrates (produced here using a Moorfield nanoCVD-8G system) at an interface between immiscible hexane and an aqueous etching solution. The etching solution removes the copper, leaving the graphene freely suspended. Application substrates are easily connected with the graphene by moving them through the liquid.

Link: http://pubs.acs.org/doi/abs/10.1021/acsami.6b00681

Moorfield products: nanoCVD-8G

Chemical Vapor Deposited Graphene for Opto-Electronic Applications

01 February 2016

Passi, V. et al. Journal of Nano Research 2016 DOI: 10.4028/www.scientific.net/JNanoR.39.57 Fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a nanoCVD-8G system from Moorfield. Graphene is produced on copper foils and subsequently transferred onto silicon-dioxide/silicon substrates. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon.

Link: http://www.scientific.net/JNanoR.39.57

Moorfield products: nanoCVD-8G

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