Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

14 March 2017

Macháč, P., et al. Journal of Electrical Engineering 2017 DOI: 10.1515/jee-2017-0011

The work reports the synthesis of few-layer graphene films at the interface of an SiO2 chip and a cobalt thin film. The cobalt layer decomposes methane feedstock, absorbs the carbon released at the SiO2/cobalt interface where it assembles into an sp2 layer. This approach is convenient for obtaining graphene on application substrates without so-called transfer procedures.

Link: https://www.degruyter.com/view/j/jee.2017.68.issue-1/jee-2017-0011/jee-2017-0011.xml

Moorfield products: nanoCVD-8G

Graphene growth by chemical vapor deposition process on copper foil

12 December 2016

Macháč, P., et al. ElectroScope 2016
The paper demonstrates the production of graphene using the cold-walled method as implemented in the nanoCVD-8G.

Link: http://147.228.94.30/index.php?option=com_content&view=article&id=468:graphene-growth-by-chemical-vapor-deposition-process-on-copper-foil&catid=59:2016-12-12-09-18-59&Itemid=56

Moorfield products: nanoCVD-8G

A simple process for the fabrication of large-area CVD graphene based devices via selective in situ functionalization and patterning

07 December 2016

Alexeev, A. A., et al. 2D Materials 2016 DOI: 10.1088/2053-1583/4/1/011010
This paper reports a simple method for the production of functional devices from CVD graphene (produced using a nanoCVD-8G system). Rather than forming devices on the application substrate after transfer, the authors demonstrate material patterning on the copper growth substrate, using lithography and plasma oxidation, pre-transfer. This simplifies growth-to-application pathways, and could allow use of a wider range of application substrates.

Link: http://iopscience.iop.org/article/10.1088/2053-1583/4/1/011010

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Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

10 February 2017

Sassi, U., et al. Nature Communications 2017 DOI: 10.1038/ncomms14311
This work reports the use of graphene as part of an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. The nanoETCH system is critical as part of the work, being used to both etch the graphene into required patterns and for modifying single sheets in order to provide for ultra-low contact resistances.

Link: http://www.nature.com/articles/ncomms14311

Moorfield products: nanoETCH

Graphene transfer methods for the fabrication of membrane-based NEMS devices

13 August 2016

Wagner, S. et al. Microelectronic Engineering 2016 DOI: 10.1016/j.mee.2016.02.065
In this work, graphene, fabricated using a Moorfield nanoCVD-8G system, was transferred onto pre-fabricated micro cavity substrates using different methods. The devices were then investigated and analyzed with respect to yield and quality of the free-standing membranes on a large-scale. An effective transfer method for layer-by-layer stacking of graphene was developed to improve the membrane stability and thereby increase the yield of completely covered and sealed cavities. The transfer method with the highest yield was used to fabricate graphene NEMS devices. Electrical measurements were carried out to successfully demonstrate pressure sensing as a possible application for these graphene membranes.

Link: http://www.sciencedirect.com/science/article/pii/S0167931716301083

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