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Compact and wafer-scale plasma-enhanced chemical vapour deposition (CVD) system for rapid synthesis of high-quality graphene.
Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies. Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.
Compatible with numerous CVD methods:
Substrates: Cu, Ni, etc. (films or foils)
Feedstocks: CH4, C2H4, solids (PMMA), etc.
Process gases: H2, Ar, N2, etc.
Process chamber: Cold-walled, stainless steel with heat shielding. Pumping system: Turbomolecular pumping system; <5×10-7 mbar base pressure. Substrate stage: Up to 4" diameter. Up to 1100 °C with 1 °C control resolution. System operation: Touchscreen HMI and PC software. Manual or automatic control. Process gases: MFC controlled. Ar, CH4 and H2 as standard. Pressure control: Automatic. Plasma generation: 150 W/13.56 MHz RF power supply. Generation at substrate stage or remote electrodes. Safety features: Coolant and vacuum interlocks. Gas dilution modules.
Pure research, product development and education in: