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High-temperature substrate annealing up to 1000 °C with precision atmosphere control.
ANNEAL systems are optimised for the thermal treatment of 2D materials and wafers under controlled atmospheres. Substrates are supported face-up on stage-top platens that are situated centrally inside a stainless-steel high-vacuum chamber fitted with appropriate heat shielding and a shuttered viewport. Heating is via a heat source located beneath the platen. Maximum temperatures up to 1000 °C are possible—depending on the heating technology used (see below).
Gas introduction: The systems can be fitted with up to 3 mass flow controllers (MFCs) for process gas introduction. Typical gases are Ar, O2 and N2. Flexible MFC full scale flow rates. Pressure measurement: As standard, ANNEAL systems are equipped with wide-range pressure measurement. But for accurate monitoring, capacitance manometers can be fitted. Automatic pressure control: Where stabilised pressures are needed, automatic pressure control (APC) packages are available. Resolutions to 0.1 mTorr are readily possible based on feedback loops between capacitance manometer readings and MFC flow rates (upstream control).