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High-temperature substrate annealing for planar substrates, up to 1000 °C, with precision gas and pressure control—all in a benchtop package.
ANNEAL systems are optimised for the thermal treatment of 2D materials and wafers under controlled atmospheres. Substrates are supported face-up on stage-top platens that are situated centrally inside a stainless-steel high-vacuum chamber fitted with appropriate heat shielding and a shuttered viewport. Heating is via a heat source located beneath the platen. Maximum temperatures up to 1000 °C are possible—depending on the heating technology used:
Heating control resolution is to ±1 °C.
For annealing under controlled atmospheres, ANNEAL systems can be fitted with up to 3 mass flow controllers (MFCs). Typical gases are Ar, O2 and N2, and full scale flow rates are flexible. All systems have wide-range gauges, but for improved accuracy, capacitance manometers are also available. In case chamber pressure is critical, automatic pressure control is available with control resolutions to 0.1 mbar.
ANNEAL systems are highly modular and can be configured for a wide range of applications.
Available options include:
All ANNEAL systems require chilled water, dry compressed air, nitrogen for venting (optional) and electrical power. Some configurations may require process gases.
Exact requirements will be provided with quotations or on request.